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UNISONIC TECHNOLOGIES CO., LTD 70N06
70 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
TO-220
1
TO-220F
FEATURES
* RDS(ON) = 15m@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability
*Pb-free plating product number: 70N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number Normal Lead Free Plating 70N06-TA3-T 70N06L-TA3-T 70N06-TF3-T 70N06L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube
70N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating Blank: Pb/Sn ,
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate to Source Voltage SYMBOL VDSS VGSS
MOSFET
RATINGS UNIT 60 V 20 V TC = 25 70 A Continuous Drain Current ID TC = 100 56 A Drain Current Pulsed (Note 1) IDM 280 A Single Pulsed Avalanche Energy (Note 2) EAS 600 mJ Repetitive Avalanche Energy (Note 1) EAR 20 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 10 V/ns Total Power Dissipation (TC = 25 ) 200 W PD 1.4 W/ Derating Factor above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL JC CS JA MIN TYP 0.5 62.5 MAX 1.2 UNIT C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified)
PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS BVDSS/ IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS = 0 V, ID = 250 A TJ ID = 1mA, Referenced to 25 VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 150 VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 35 A 2.0 12 3300 530 80 12 79 80 52 90 20 30 MIN 60 0.08 1 10 100 -100 4.0 15 TYP MAX UNIT V V/ A A nA nA V m pF pF pF ns ns ns ns nC nC nC
VGS = 0 V, VDS = 25 V f = 1MHz
VDD = 30V, ID =70 A, VGS=10V, (Note 4, 5) VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5)
140 35 45
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 70A, VGS = 0 V Integral Reverse p-n Junction Diode in the MOSFET Continuous Source Current IS
D
MOSFET
TYP
MAX UNIT 1.4 70 A V
Pulsed Source Current
ISM
G S
280
Reverse Recovery Time tRR IS = 70A, VGS = 0 V dIF / dt = 100 A/s Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=70A, RG=20, Starting TJ=25 3. ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300s,Duty Cycle2% 5. Essentially independent of operating temperature.
90 300
ns C
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TEST CIRCUITS AND WAVEFORMS
MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
P.W.
Period
D=
P. W. Period
VGS= 10V
I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv /dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1 s Duty Factor 0.1%
D.U.T.
VGS
10%
t D(ON ) tR tD (OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50k 12V 0.2 F 0.3 F
Same Type as D.U.T. 10V VDS QGS
QG
QGD
VGS DUT 1mA VG
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS
RG
VDD D.U.T.
10V tp
IAS
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
On -State Characteristics
V GS Top : 15V 10 V 8V 7V 2 10 6V 5 .5V 5V Bottorm : 4.5V
MOSFET
Transfer Characteristics
Drain Current, ID (A)
Drain Current, ID (A)
102
101
25
101
4 .5V
1 50
Note : 1 . VDS =25 V 2. 20 Pulse Test s 100 2 3 5 7 9 10 4 6 8 Gate -Source Voltage , VGS (V)
100 -1 10
101 100 Drain-Source Voltage , VDS (V)
Drain-Source On-Resistance, RDS(ON) (m )
15
On-Resistance Variation vs Drain . Current and Gate Voltage Reverse Drain Current, ISD (A) 102
Reverse Drain Current vs Allowable . Case Temperature
14
13
VGS=10V
150 10 1 25 *Note: 1. VGS=0V 2. 250s Test 1.6
12
11
0
10 20 30 40 50 60 70 80 90 100 Drain Current, I D (A)
10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage VSD (V) ,
6000
Capacitance (pF)
5000 4000 3000 2000 1000
Gate-to-Source Voltage, VGS (V)
Capacitance Characteristics (Non-Repetitive) C ISS=C GS+CGD (CDS=shorted) C OSS =CDS+CGD C RSS=C GD C ISS
Gate Charge Characteristics 12 10 8 6 4 2 0 0 *Note: ID=48A 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q G (nC) VDS=38V VDS=60V
COSS 0
CRSS
*Note: 1. VGS=0V 2. f = 1MHz
5 10 15 20 25 30 35 Drain-Source Voltage, VDC (V)
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TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs Junction . Temperature 1.2 1.1 On-Resistance Variation vs . Junction Temperature
MOSFET
Drain-Source On-Resistance, RDS(ON), (Normalized)
Drain-Source Breakdown Voltage, BVDSS(Normalized)
3.0 2.5 2.0 1.5 1.0 0.5 0.0
1.0 *Note: 1. VGS=0V 2. ID=250A -50 0 50 100 150 200 )
0.9
*Note: 1. VGS=10V 2. I D=35A -50 0 50 100 150 Junction Temperature, T J ( )
0.8 -100
Junction Temperature, T J (
Maximum Safe Operating 100 Operation in This Area by RDS (on) 70 60
Maximum Drain Current vs. Case Temperature
Drain Current , ID,(A)
Drain Current, ID (A)
10
100s 10ms DC 1ms
50 40 30 20 10 0 25 50 100 125 75 Case Temperature, T C ( ) 150
1
0.1 1
*Note: 1. T c=25 2. T J=150 3. Single Pulse 10 100 1000 Drain-Source Voltage, VD (V)
Transient Thermal Response Curve
(t)
Thermal Response, Z
JC
1
D=0.5 0.2
0.1
0.1
0.05 0.02 0.01 Single pulse
*Note: 1. Z J C (t) = 0.88 /W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC =PDMxZ J C (t)
0.01
10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration t 1 (sec) ,
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MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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